Ferroelectric random-access memory is a non-volatile memory technology that utilizes the switchable polarization states of ferroelectric materials to represent binary data. This concept defines a field of research and development focused on creating memory devices that offer the speed of conventional random-access memory combined with the persistent data storage of non-volatile memory. The research investigates the fundamental properties and synthesis of ferroelectric thin films, the design and fabrication of memory cell structures, and the electrical characteristics governing read/write operations, data retention, endurance, and power consumption. Its key characteristics include high-speed random access, low-power operation, and significantly higher write endurance compared to traditional non-volatile memories like flash. The significance of this technology lies in its potential to provide a high-performance, low-power, and highly reliable non-volatile memory solution for a wide range of applications, from embedded systems and smart cards to potentially replacing or augmenting existing memory hierarchies.